Scanning of irradiated silicon detectors using alpha particles and low-energy protons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 434, Issue 1, 1999, Pages 118-130

  Casse, G ^a   Dolezal Z ^b   Glaser, M ^a   Kohout, Z ^c   Konicek J ^c   Lemeilleur, F ^a   Leroy, C ^d   Linhart, V ^c   Mares J J ^e   Pospisil S ^c   Roy, P ^d   Sopko, B ^c   Sinor M ^c   Svejda J ^b   Vorobel, V ^b   Wilhelm, I ^b  

^a CERN   (Switzerland)

^b CHARLES UNIVERSITY   (Czech Republic)

^c CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^d UNIVERSITÉ DE MONTRÉAL   (Canada)

^e INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ELECTRIC POTENTIAL; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DIODES; SILICON SENSORS;

ALPHA PARTICLE IRRADIATION; CHARGE COLLECTION EFFICIENCY; SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0344182990     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00591-4     Document Type: Article

References (5)

1. L. Evensen, Processing of the CERN 2 devices at SINTEF, Second Workshop on Radiation Hardening of Silicon Detectors, CERN 4-5 February 1997, Rose Collaboration, CERN RD-48, 1997, p. 47.
2. Jech Č., Janout Z., Koníček J., Kubašta J., Pospíšil S., Vobecký M. Collect. Czech. Chem. Commun. 62:1997;218.
3. D.H. Wilkinson, Ionization Chambers and Counters, Cambridge at the University Press, Cambridge, 1950, pp. 122-123.
4. H.K. Henisch, Semiconductor Contacts, Clarendon Press, Oxford, 1984, pp. 293-323.
5. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 2nd Edition, 1981, pp. 637.