메뉴 건너뛰기




Volumn 44, Issue 3 PART 1, 1997, Pages 721-727

Radiation effects on breakdown characteristics of multiguarded devices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000255149     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.603740     Document Type: Article
Times cited : (22)

References (12)
  • 1
    • 6144251462 scopus 로고
    • New York: John Whiley & Sons
    • B.J. Baliga, Modem Power Devices, New York: John Whiley & Sons, 1987, pp. 62-100.
    • (1987) Modem Power Devices , pp. 62-100
    • Baliga, B.J.1
  • 4
    • 0039562690 scopus 로고    scopus 로고
    • Radiation Effects on Breakdown in Silicon Multiguarded Diodes
    • Sept.
    • D. Bisello, M. Da Rold, L. Franzin, A. Paccagnella, R. Wheadon, " Radiation Effects on Breakdown in Silicon Multiguarded Diodes", Il Nuovo Cimento, vol 109 A, n.9, pp. 1343-1350, Sept. 1996.
    • (1996) Il Nuovo Cimento , vol.109 A , Issue.9 , pp. 1343-1350
    • Bisello, D.1    Da Rold, M.2    Franzin, L.3    Paccagnella, A.4    Wheadon, R.5
  • 7
    • 0028705541 scopus 로고
    • Study of Punch-Through Characteristics in Irradiated MOSFETs
    • December
    • A. Paccagnella, D. Bisello, M. Da Rold, Yu. Gotra, and P. Benetti, "Study of Punch-Through Characteristics in Irradiated MOSFETs", IEEE Trans. Nucl. Sci., vol. 41, no.6, pp. 2511-2520, December 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , Issue.6 , pp. 2511-2520
    • Paccagnella, A.1    Bisello, D.2    Da Rold, M.3    Gotra, Y.4    Benetti, P.5
  • 9
    • 0014778389 scopus 로고
    • Measurements of the ionization rates in diffused silicon p-n junctions
    • R. Van Overstraeten and H. De Man, "Measurements of the ionization rates in diffused silicon p-n junctions", Solid St. Electr., vol. 13, pp. 583-608, 1970.
    • (1970) Solid St. Electr. , vol.13 , pp. 583-608
    • Van Overstraeten, R.1    De Man, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.