Radiation hardening of silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 434, Issue 1, 1999, Pages 82-89

  Lemeilleur, F ^a  

^a CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; RADIATION HARDENING; SEMICONDUCTOR DIODES; SILICON SENSORS;

CHARGE COLLECTION EFFICIENCY; RADIATION HARDNESS; SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0032645291     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00436-2     Document Type: Article

References (15)

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6. TOPSIL, Frederikssund, Denmark.
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14. B. MacEvoy, Defect kinetics modelling; a brief review and some interesting results, Third ROSE Workshop on Radiation Hardening of Silicon Detectors, DESY Hamburg, 12-14 February 1998, DESY-PROCEEDINGS-1998-02, February 1998.
15. M. Moll, Influence of oxygen concentration on the radiation hardness of silicon detectors, Third ROSE Workshop on Radiation Hardening of Silicon Detectors, DESY Hamburg, 12-14 February 1998, DESY-PROCEEDINGS-1998-02, February 1998.