Study of breakdown effects in silicon multiguard structures

IEEE Transactions on Nuclear Science

Volumn 46, Issue 4 PART 3, 1999, Pages 1215-1223

  Da Rold, M ^a   Bacchetta, N ^a   Bisello, D ^a   Paccagnella, A ^a   Dalla Betta, G F ^b   Verzellesi, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; MICROSTRIP DEVICES; RADIATION DAMAGE; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR JUNCTIONS; SILICON SENSORS; SILICON WAFERS;

SILICON MULTIGUARD STRUCTURES; SILICON RADIATION DETECTORS;

PARTICLE DETECTORS;

EID: 0033312975     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.785736     Document Type: Article

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