Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 999-1005

  Takagi, Shin Ichi ^a   Takayanagi, Mariko ^a   Toriumi, Akira ^b  

^a Advanced LSI Technology Laboratory   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Capacitance; Inversion layers; MOS capacitors; MOSFET's; Power supplies; Semiconductor device modeling; Semiconductor insulator interfaces

Indexed keywords

EID: 0000154265     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841232     Document Type: Article

References (13)

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