2-V-operation δ-doped power HEMT's for personal handy-phone systems

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 8, 1997, Pages 219-221

  Lai, Yeong Lin ^a   Chang, Edward Y ^a,d   Chang, Chun Yen ^a,b,d   Liu, T H ^c   Wang, S P ^c   Hsu, H T ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Hexawave Inc   (Taiwan)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; PHASE SHIFT KEYING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ADJACENT CHANNEL LEAKAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031210112     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.605483     Document Type: Article

References (7)

1. M. Muraguchi, M. Nakatsugawa, H. Hayashi, and M. Aikawa, "A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications," in IEEE MTT-S Dig., 1995, pp. 9-12.
2. P. O'Sullivan, G. St. Onge, E. Heaney, F. McGrath, and C. Kermarrec, "High performance integrated PA, T/R switch for 1.9 GHz personal communication handsets," in GaAs IC Symp. Tech. Dig., 1993, pp. 33-35.
3. T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, and O. Ishikawa, "Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5V single voltage supply," in GaAa IC Symp. Tech. Dig., 1996, pp. 107-110.
4. H. Ono, Y. Umemoto, M. Mori, M. Miyazaki, A. Terano, and M. Kudo, "Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9 GHz PHS standards," in IEEE MTT-S Dig., 1996, pp. 547-550.
5. M. Hirose, K. Nishihori, M. Nagaoka, Y. Ikeda, A. Kameyama, Y. Kitaura, and N. Uchitomi, "A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply," in GaAs IC Symp. Tech. Dig., 1996, pp. 237-240.
6. T. Kunihisa, T. Yokoyama, H. Fujimoto, K. Ishida, H. Takehara, and O. Ishikawa, "High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone," in IEEE MTT-S Dig., 1994, pp. 55-58.
7. x/W self-aligned gate GaAs power MESFET for 1.9-GHz digital mobile communication system operating with a single low voltage supply," in Ext. Abstr. Int. Conf. on Solid State Devices and Materials, 1993, pp. 703-705.