Bias-dependent linear, scalable millimeter-wave FET model

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2000, Pages 1381-1384

  Wood, J ^a   Root, D E ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEAR EQUIVALENT CIRCUIT; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SCATTERING PARAMETER MEASUREMENT;

EQUIVALENT CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; LINEAR INTEGRATED CIRCUITS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033694436     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. D. E. Root, "Measurement-based mathematical active device modeling for high frequency circuit simulation", IEICE Transactions on Electronics E82-C (6) June 1999
2. J. Pla, W. Struble, F. Colomb, "On-wafer calibration techniques for measurement of microwave circuits and devices on thin substrates", 1995 IEEE-MTTS Digest, pp 1045-48
3. G.Dambrine, A. Cappy, F. Heliodore, E. Playez, "A new method for determining the FET small-signal equivalent circuit", IEEE Transactions on Microwave Theory and Techniques MTT-36 (7) pp1151-59 1938
4. D. McGinty, D. E. Root, J. Perdomo, "A production FET modeling and library generation system (FLAMIBE: fast library and model generation engine)", Proceedings of 1997 International Conference on GaAs Manufacturing MANTECH 97, pp 145-148
5. P.J. Tasker and J. Braunstein, "New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz", 1995 IEEE-MTTS Digest, pp 611-614