High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 429-431

  Lai, Yeong Lin ^a   Chang, Edward Y ^a,e   Chang, Chun Yen ^a,b,e   Tai, M C ^a   Liu, T H ^c   Wang, S P ^c   Chuang, K C ^a   Lee, C T ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Hexawave Inc   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^e IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; GATES (TRANSISTOR); ION IMPLANTATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERSONAL COMMUNICATION SYSTEMS; PHASE SHIFT KEYING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DIGITAL WIRELESS PERSONAL HANDYPHONE SYSTEMS (PHS); POWER ADDED EFFICIENCY (PAE); QUADRATURE PHASE SHIFT KEYING (QPSK);

MESFET DEVICES;

EID: 0031235404     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622519     Document Type: Article

References (12)

1. M. Muraguchi, M. Nakatsugawa, H. Hayashi, and M. Aikawa, "A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications," in IEEE MTT-S Dig., 1995, pp. 9-12.
2. T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, and O. Ishikawa, "Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply," in GaAs IC Symp. Tech. Dig., 1996, pp. 107-110.
3. H. Ono, Y. Umemoto, M. Mori, M. Miyazaki, A. Terano, and M. Kudo, "Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9 GHz PHS standards," in IEEE MTT-S Dig., 1996, pp. 547-550.
4. M. Hirose, K. Nishihori, M. Nagaoka, Y. Ikeda, A. Kameyama, Y. Kitaura, and N. Uchitomi, "A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply," in GaAs IC Symp. Tech. Dig., 1996, pp. 237-240.
5. T. Kunihisa, T. Yokoyama, H. Fujimoto, K. Ishida, H. Takehara, and O. Ishikawa, "High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone," in IEEE MTT-S Dig., 1994, pp. 55-58.
6. x/W self-aligned gate GaAs power MESFET for 1.9-GHz digital mobile communication system operating with a single low voltage supply," in Ext. Abstr. Int. Conf. on Solid State Devices and Materials, 1993, pp. 703-705.
7. M. Feng, J. Laskar, and J. Kruse, "Super-low-noise performance of direct-ion-implanted 0.25-μm-gate GaAs MESFET's," IEEE Electron Device Lett., vol. 13, pp. 241-243, May 1992.
8. T. Hwang and M. Feng, "High drain current-voltage product of submicrometer-gate ion-implanted GaAs MESFET's for millimeterwave operation," IEEE Electron Device Lett., vol. 13, pp. 445-447, Sept. 1992.
9. M. Mitama, "Mobile Communications Systems Trend in Japan and Device Requirements," in GaAs IC Symp. Tech. Dig., 1995, pp. 6-9.
10. N. Iwata, K. Inosako, and M. Kuzuhara, "3 V operation L-band power double-doped heterojunction FET's," in IEEE MTT-S Dig., 1993, pp. 1465-1468.
11. C. Gaquiere, B. Bonte, D. Théron, Y. Crosnier, P. Arséne-Henri, and T. Pacou, "Breakdown analysis of an asymmetrical double recessed power MESFET's," IEEE Trans. Electron Devices, vol. 42, pp. 209-214, Feb. 1995.
12. K. Y. Hur, R. A. McTaggart, B. W. LeBlanc, W. E. Hoke, P. J. Lemonias, A. B. Miller, T. E. Kazior, and L. M. Aucoin, "Double recessed AlInGa/GaInAs/InP HEMT's with high breakdown voltages," in GaAs IC Symp. Tech. Dig., 1995, pp. 101-104.