Full rf characterization for extracting the small-signal equivalent circuit in microwave fet's

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2625-2633

  Apolinar Reynoso Hernandez J ^a   Rangel Patino, Francisco Elias ^a   Perdomo, Julio ^a  

^a CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE MEASUREMENT; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTANCE MEASUREMENT; MATHEMATICAL MODELS; MICROWAVE DEVICES; SPURIOUS SIGNAL NOISE;

ACCESS RESISTANCE; MICROWAVE FIELD EFFECT TRANSISTORS; PARASITIC CAPACITANCE;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 0030421220     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554613     Document Type: Article

References (15)

1. F. Lin and G. Kompa, FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-A new concept, IEEE Trans. Microwave Theory Tech., vol. 42, no. 7, pp. 1114-1121, July 1994.
2. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, A new method for determining the FET small-signal equivalent circuit, IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151-1159, July 1988.
3. M. Berroth and R. Bosch, Broad-band determination of the FET smallsignal equivalent circuit, IEEE Trans. Microwave Theory Tech., vol. 38, no. 7, pp. 891-895, July 1990.
4. R. L. Vaitkus, Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from measured two-port scattering parameters, Proc. 1983 IEEE Cornell Conf. High-Speed Semiconductor Dev. and Circ., 1983, pp. 301-308.
5. P. Jansen, D. Schreurs, W. De Raedt, B. Nauwelaers, and M. Van Rossuin, Consistent small-signal and large-signal extraction techniques for heterojunction FET's, IEEE Trans. Microwave Theory Tech., vol. 43, no. 1, pp. 87-93, Jan. 1995.
6. P; C. Walters, R. D. Pollard, J. R. Richardson, and G. Gatti, Millimeterwave device modeling differences in microstrip and coplanar waveguide, in 1993 IEEE MTT-S Int. Microwave Symp. Dig., June 1993, ' vol. 3, pp. 1173-1176.
7. H. Fukui, Determination of the basic device parameters of a GaAs MESFET, Bell System Tech. J., vol. 58, no. 3, pp. 771-797, Mar. 1979.
8. K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. J. Helix, Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's, IEEE Trans. Electron Devices. vol. ED-32, no. 5, pp. 987-992, May 1985.
9. S. Chaudhuri and M. B Das, An investigation of the MESFET 'end' resistance using a distributed 'diode/resistance model, IEEE Trans. Electron Devices, vol. ED-32, no. 11, pp. 2262-2268, Nov. 1985. [10] R. Vogel, The application of RF wafer probing to MESFET modeling, Microwave J., vol. 31, no. 11, pp. 153-162, Nov. 1988.
10. [II] J. C. Costa, M. Miller, M. Golio, and G. Norris, Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFET's and HEMT's, in 7992 IEEE MTT-S Int. Microwave Symp. Dig., June 1992, vol. 2, pp. 1011-1014.
11. R. Tayrani, J. E. Gerber, T. Daniel, R. S. Pengelly, and U. L. Rodhe, A new and reliable direct parasitic extraction method for MESFET'-s and HEMT's, in 23rd Euro. Microwave Conf., pp. 451-453, 1993.
12. B.-S. Kim and S. Nam, An iterative parasitic extraction method for HEMT, in 25th Euro. Microwave Conf., pp. 558-561, 1995.
13. R. J. Bennett, Interpretation of forward bias behavior of Schottky barriers, IEEE Trans. Electron Devices, vol. ED-34,'no. 4, pp. 935-937, Apr. 1987.
14. S. K. Cheung and N. W. Cheung, Extraction of Schottky diode parameters from forward current-voltage characteristics, Appl. Phys. Lett, vol. 49, no. 2, pp. 85-87, July 1986.
15. E. Arnold, M. Golio, M. Miller, and B. Beckwith, Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values, in 1990 IEEE MTT-S Int. Microwave Symp. Dig., May 1990, vol. 1, pp. 359-362.