Bias-dependent `cold-(H)FET' modeling

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1996, Pages 1313-1316

  Stiebler, W ^a   Matthes, M ^a   Boeck, G ^a   Koppel, T ^a   Schaefer, A ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; MESFET DEVICES; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

BIAS DEPENDENT MODEL; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; ZERO DRAIN BIAS PINCHED OFF CONDITIONS;

FIELD EFFECT TRANSISTORS;

EID: 0029714776     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)