Determination of the inelastic mean free path (IMFP) of electrons in germanium and silicon by elastic peak electron spectroscopy (EPES) using an analyser of high resolution

Vacuum

Volumn 48, Issue 7-9, 1997, Pages 621-624

  Gergely, G ^a   Konkol, A ^a   Menyhard, M ^a   Lesiak, B ^b   Jablonski, A ^b   Varga, D ^c   Toth, J ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b POLISH ACADEMY OF SCIENCES   (Poland)

^c INSTITUTE OF NUCLEAR RESEARCH ATOMKI   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; ELECTRON EMISSION; ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; MATHEMATICAL MODELS; MONTE CARLO METHODS; POLYCRYSTALLINE MATERIALS; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELASTIC PEAK ELECTRON SPECTROSCOPY (EPES); ELASTIC PEAK INTENSITY RATIOS; INELASTIC MEAN FREE PATH (IMFP);

SURFACE PHENOMENA;

EID: 0031222541     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(97)00048-1     Document Type: Article

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