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Volumn 415, Issue 3, 1998, Pages 251-263

A near-edge X-ray absorption fine structure study of atomic layer epitaxy: The chemistry of the growth of CdS layers on ZnSe(100)

(5) Han, M a Luo, Y a Moryl, J E a Osgood Jr , R M a Chen, J G b

a Och Spine at New York Presbyterian Hospitals (United States)

b EXXONMOBIL UPSTREAM RESEARCH COMPANY (United States)

Author keywords

(CH3)2Cd; Atomic layer epitaxy (ALE); CdS; H2S; Heteroepitaxy; Near edge X ray absorption fine structure (NEXAFS); Surface chemistry; Synchrotron radiation; Temperature programmed desorption (TPD); Thin film deposition

Indexed keywords

CHEMISTRY; DEPOSITION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SURFACES; SYNCHROTRON RADIATION; TEMPERATURE PROGRAMMED DESORPTION; THIN FILMS;

ATOMIC LAYER EPITAXY; HETEROEPITAXY; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE;

EPITAXIAL GROWTH;

EID: 0032500390 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00453-1 Document Type: Article

Times cited : (22)

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