On the hot hole induced post-stress interface trap generation in MOSFET's

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 305-310

  Al kofahi, I S ^a   Zhang, J F ^a   Groeseneken, G ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

HOT HOLE; INTERFACE TRAP GENERATION; POST STRESS DEGRADATION;

MOSFET DEVICES;

EID: 0029718548     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1996.492135     Document Type: Conference Paper

References (20)