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MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

Schottky diodes on MOCVD grown AlGaN films

(7) Polyakov, A Y a Smirnov, N B a Govorkov, A V a Greve, D W b Skowronski, M c Shin, M c Redwing, Joan M d

a INSTITUTE OF RARE METALS (Russian Federation)

b CARNEGIE MELLON UNIVERSITY (United States)

c CARNEGIE MELLON UNIVERSITY (United States)

d Epitronics/ATMI (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CAPACITANCE; DOPING (ADDITIVES); ELECTRON TRAPS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; ION BOMBARDMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC SOLVENTS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; TEMPERATURE MEASUREMENT; ULTRAVIOLET RADIATION; VOLTAGE CONTROL;

PHOTOCAPACITANCE; PLASMA SPUTTERING; SURFACE PINNING; VACUUM EVAPORATION;

SEMICONDUCTING FILMS;

EID: 4043066367 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300001095 Document Type: Article

Times cited : (2)

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