Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 591-596

  Ishikawa, Hiroyasu ^a   Nakada, Naoyuki ^a   Nakaji, Masaharu ^a   Zhao, Guang Yuan ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Algan; Distributed bragg reflector (dbr); Galnn; Gan; Light emitting diode (led)

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DISTRIBUTED BRAGG REFLECTOR; GALLIUM NITRIDE;

BRAGG CELLS; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRESS;

LIGHT EMITTING DIODES;

EID: 0033682768     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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