Tunneling gate oxide approach to ultra-high current drive in small-geometry MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 593-596

  Momose, Hisayo Sasaki ^a   Ono, Mizuki ^a   Yoshitomi, Takashi ^a   Ohguro, Tatsuya ^a   Nakamura, Shin ichi ^a   Saito, Masanobu ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

TUNNELING GATE OXIDE; ULTRAHIGH CURRENT DRIVE;

MOSFET DEVICES;

EID: 0028735535     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)