Quantitative analysis of tunneling current through ultrathin gate oxides

Japanese Journal of Applied Physics

Volumn 34, Issue 7, 1995, Pages L903-L906

  Yoshida, Takeshi ^a   Imafuku, Daisuke ^a   Alay, Josep Lluis ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Charge to breakdown QBD; Direct tunneling; Fowler Nordheim tunneling; Si surface microroughness; Ultrathin gate oxide

Indexed keywords

APPROXIMATION THEORY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TUNNELING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SURFACE ROUGHNESS;

CHARGE TO BREAKDOWN; DIRECT TUNNELING; ELECTRON INJECTION; FOWLER NORDHEIM TUNNELING; TUNNELING CURRENT; ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0029342950     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L903     Document Type: Article

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