Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

Surface Science

Volumn 170, Issue 1-2, 1986, Pages 363-369

  Toriumi, A ^a   Yoshimi, M ^a   Iwase, M ^a   Taniguchi, K ^a   Hamaguchi, C ^b  

^a TOSHIBA CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342289147     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(86)90988-X     Document Type: Article

References (3)

1. Mobility degradation in very thin Oxide p-channel MOSFET's