Evaluation of gap states in hydrogen-terminated silicon surfaces and ultrathin SiO2/Si interfaces by using photoelectron yield spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 500, Issue , 1998, Pages 81-86

  Miyazaki, S ^a   Tamura, T ^a   Maruyama, T ^a   Murakami, H ^a   Kohno, A ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; THERMAL EFFECTS; ULTRATHIN FILMS;

GAP STATES; HYDROGEN TERMINATED SILICON; PHOTOELECTRON YIELD SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032294516     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)