Polycrystalline silicon thin-film transistors

Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 325-336

  Wagner, S ^a   Wu, M ^a   Min, B G R ^a   Cheng, I C ^a  

^a Princeton University   (United States)

Author keywords

CMOS; Microcrystalline silicon; Nanocrystalline silicon; Steel substrate; Thin film transistor

Indexed keywords

DEPOSITION; ELECTRON MOBILITY; FILM GROWTH; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; THERMAL EFFECTS;

MICROCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; THERMAL OXIDE GATE INSULATOR;

THIN FILM TRANSISTORS;

EID: 0034825025     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.80-81.325     Document Type: Conference Paper

References (44)

1. Microcrystalline silicon for N and P channel thin film transistors and complementary mental-oxide-silicon inverters