Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Cheng, I C ^a   Wagner, S ^a   Mulato, M ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON MOBILITY; GLOW DISCHARGES; SILANES; SILICA;

MICROCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0034431068     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a31.2     Document Type: Conference Paper

References (11)