Transistors with a profiled active layer made by hot-wire CVD

Materials Research Society Symposium - Proceedings

Volumn 508, Issue , 1998, Pages 31-36

  Meiling, H ^a   Brockhoff, A M ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

HOT-WIRE CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0032314095     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-508-31     Document Type: Conference Paper

References (17)