High temperature polycrystalline silicon thin film transistor on steel substrates

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 119-122

  Wu, Ming ^a   Pangal, Kiran ^a   Sturm, James C ^a   Wagner, Sigurd ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; HIGH TEMPERATURE OPERATIONS; METAL FOIL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STEEL; SUBSTRATES;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAY; HYDROGENATED AMORPHOUS SILICON; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; STRAIN TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 0033325336     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)