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Volumn 21, Issue 2, 2000, Pages 70-72

Poly-Si thin-film transistors on steel substrates

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STAINLESS STEEL; SUBSTRATES; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

EID: 0034140186     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.821670     Document Type: Article
Times cited : (48)

References (9)
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    • Y. Matsueda et al., "Low temperature polysilicon TFT-LCD with integrated 6-bit digital data drivers," in SID Tech. Dig., vol. 27, 1996, pp. 21-24.
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    • Matsueda, Y.1
  • 2
    • 0032276254 scopus 로고    scopus 로고
    • Polysilicon VGA active matrix OLED displays - Technology and performance
    • M. Stewart et al., "Polysilicon VGA active matrix OLED displays - Technology and performance," in Proc. IEDM , 1998, pp. 871-874.
    • (1998) Proc. IEDM , pp. 871-874
    • Stewart, M.1
  • 3
    • 0003947572 scopus 로고    scopus 로고
    • A polysilicon active matrix oled display with integrated drivers
    • R. Dawson et al., "A polysilicon active matrix OLED display with integrated drivers," in SID Tech. Dig., vol. 30, 1999, pp. 438-441.
    • (1999) SID Tech. Dig. , vol.30 , pp. 438-441
    • Dawson, R.1
  • 4
    • 0032311803 scopus 로고    scopus 로고
    • Low temperature PECVD polysilicon crystallization by rapid thermal processing
    • M. Stewart et al., "Low temperature PECVD polysilicon crystallization by rapid thermal processing," in Proc. MRS Symp., vol. 508, 1998, p. 109.
    • (1998) Proc. MRS Symp. , vol.508 , pp. 109
    • Stewart, M.1
  • 5
    • 0343560319 scopus 로고
    • Excimer laser annealing process for polysilicon TFT AMLCD applications
    • Y. Sun, S. Chen, P. Mei, and J. Boyce, "Excimer laser annealing process for polysilicon TFT AMLCD applications," in Proc. Int. Display Research Conf., 1994, p. 134.
    • (1994) Proc. Int. Display Research Conf. , pp. 134
    • Sun, Y.1    Chen, S.2    Mei, P.3    Boyce, J.4
  • 6
    • 0032000151 scopus 로고    scopus 로고
    • Enhanced grain growth phenomena in excimer laser annealed microcrystalline silicon films
    • A. T. Voutsas, "Enhanced grain growth phenomena in excimer laser annealed microcrystalline silicon films," Jpn. J. Appl. Phys., vol. 37, pp. 388-396, 1998.
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 388-396
    • Voutsas, A.T.1
  • 7
    • 0030403279 scopus 로고    scopus 로고
    • Amorphous silicon thin film transistors on steel foil substrates
    • Dec.
    • S. D. Theiss and S. Wagner, "Amorphous silicon thin film transistors on steel foil substrates," IEEE Electron Device Lett., vol. 17, pp. 578-580, Dec. 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 578-580
    • Theiss, S.D.1    Wagner, S.2
  • 8
    • 33747286911 scopus 로고
    • Large grain polycrystalline silicon by low temperature annealing of low pressure chemically vapor deposited amorphous silicon films
    • M. Hatalis and D. Greve, "Large grain polycrystalline silicon by low temperature annealing of low pressure chemically vapor deposited amorphous silicon films," J. Appl. Phys., vol. 63, pp. 2260-2266, 1988.
    • (1988) J. Appl. Phys. , vol.63 , pp. 2260-2266
    • Hatalis, M.1    Greve, D.2
  • 9
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    • High performance thin film transistors in large grain size polysilicon deposited by thermal decomposition of disilane
    • D. Kouvatsos, "High performance thin film transistors in large grain size polysilicon deposited by thermal decomposition of disilane," IEEE Trans. Electron Devices, vol. 43, pp. 1399-1406, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1399-1406
    • Kouvatsos, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.