Near intrinsic microcrystalline silicon for use in thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 893-898

  Froggatt, M W D ^a   Milne, W I ^a   Powell, M J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FABRICATION; PLASMA APPLICATIONS; SEMICONDUCTING SILICON;

DARK CONDUCTIVITY; HYDROGEN DILUTION METHOD; HYDROGENATED MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0031354616     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-893     Document Type: Conference Paper

References (16)