Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2422-2424

  Koester, S J ^a   Ismail, K ^a   Lee, K Y ^a   Chu, J O ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643095738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118891     Document Type: Article

References (11)

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