Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 435-437

  Ismail, K ^a   Chu, J O ^a   Arafa, M ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

DEPLETION MODE TRANSISTORS; ENHANCEMENT MODE TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0031233838     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622521     Document Type: Article

References (5)

1. K. Ismail, S. F. Nelson, J. O. Chu, and B. S. Meyerson, "Electron transport properties in Si/SiGe heterostructures: Measurements and device implications," Appl. Phys. Lett., vol. 63, p. 660, 1993.
2. K. Ismail, "Si/SiGe high-speed field-effect transistors," in IEDM Tech. Dig., 1995, p. 509.
3. J. Welser, J. L. Hoyt, and J. F. Gibbons, "NMOS and PMOS transistors fabricated in strained/relaxed silicon-germanium structures," in IEDM Tech. Dig., 1992, p. 1000.
4. A. Sadek, K. Ismail, M. Armstrong, D. Antoniadis, and F. Stern, "Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors," IEEE Trans. Electron Devices, vol. 43, p. 1224, 1996.
5. U. Koenig and H. Dambkes, "Si/SiGe HBT's and HFET's," Solid-State Electron., vol. 38, p. 1595, 1995.