AFM-based fabrication of free-standing Si nanostructures

Nanotechnology

Volumn 7, Issue 4, 1996, Pages 434-437

  Snow, E S ^a   Campbell, P M ^a   McMarr, P J ^a,b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Sachs Freeman Associates

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SURFACE TREATMENT; SURFACES;

FREE STANDING SILICON; SELECTIVE OXIDATION;

NANOSTRUCTURED MATERIALS;

EID: 0030354176     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/7/4/024     Document Type: Article

References (11)

1. Dagata J A, Schneir J, Harary H H, Evans C J, Postek M T and Bennet J 1990 Appl. Phys. Lett. 56 2001
2. Snow E S, Campbell P M and McMarr PJ 1993 Appl. Phys. Lett. 63 749
3. Snow E S and Campbell P M 1994 Appl. Phys. Lett. 64 1932
4. Snow E S, Campbell P M and Shanabrook B V 1993 Appl. Phys. Lett. 63 3488
5. Campbell P M, Snow E S and McMarr P J 1994 Solid State Electron. 37 583
6. Marrian C R K, Perkins F K, Brandow S L, Koloski T S, Dobisz E A and Calvert J M 1994 Appl. Phys. Lett. 64 390
7. Dressick W J and Calvert JM 1993 Japan. J. Appl. Phys. 32 5829
8. Calvert JM 1993 J. Vac. Sci. Technol. B 11 2155
9. Eyding J W, Shen T-C, Hubacek J S, Tucker J R and Abeln GC 1994 Appl. Phys. Lett. 64 2010
10. Tsau L, Wang D and Wang KL 1994 Appl. Phys. Lett. 64 2133
11. McMarr P J, Mrstik B J, Barger M S, Bowden G and Blanco J R 1990 J. Appl. Phys. 67 7211