n- and p-Type SiGe HFETs and circuits

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1383-1388

  Konig U ^a   Zeuner, M ^a   Hock G ^a   Hackbarth, T ^a   Gluck M ^a   Ostermann, T ^b   Saxarra, M ^c  

^a DAIMLER AG   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; CARRIER MOBILITY; CURRENT DENSITY; DIGITAL INTEGRATED CIRCUITS; HETEROJUNCTIONS; LOGIC CIRCUITS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; RADIO COMMUNICATION; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE;

ANALOG CIRCUITS; CUT OFF FREQUENCY; GATE DELAY; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MODULATION DOPED FIELD EFFECT TRANSISTORS; SILICON GERMANIUM; TRANSIMPEDANCE AMPLIFIER;

MOSFET DEVICES;

EID: 0342362281     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00077-5     Document Type: Article

References (17)

1. Ismail K, Nelson SE, Chu JO, Chan K, Meyerson BS. Appl Phys Lett 1993;63(5):660-2.
2. Höck G, Hackbarth T, Erben U, Kohn E, König U. High performance 0.25 μm p-type Ge/SiGe MODFETs. IEE Electron Lett 1998;34(19):1888-9.
3. König U, Gruhle A. Proc. of the IEEE Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits. 1997. p. 14-23.
4. König U, Glöck M, Gruhle A, Hock G, Kohn E, Bozon B, Nuembergk D, Ostermann T, Hagelauer R. Solid State Electron 1997;41(10):1541-7.
5. Hagelauer R, Ostermann T, König U, Glück M, Hock G. IEE Electron Lett 1997;33(3):208-10.
6. Sadek A, Ismail K, Armstrong MA, Antoniadis DA, Stem F. IEEE Trans Electron Dev 1996;ED-43(8):1224-32.
7. Dämbkes H, Herzog HJ, Jorke H, Kibbel H, Kasper E. The n-channel SiGe/Si modulation-doped field-effect transistor. IEEE Trans Electron Dev 1986;ED-33(5):633-8.
8. 1-ysubstrates. Appl Phys Lett 1986;48(8):538-40.
9. Beck WA, Anderson JR. Determination of electrical transport properties using a novel magnetic field dependent Hall technique. J Appl Phys 1987;62(2):541-54.
10. x. hetero structures with respect to FET applications. E-MRS Spring Meeting, June 16-19, 1998, Strasbourg, France. Thin Solid Films 1998;336:141-4.
11. T low operating bias self aligned p-type SiGe MODFET. IEEE Electron Dev Lett 1996;17(12):586-8.
12. König U, Schäffler F. Modulation-doped high-mobility Si/SiGe hetero structures for device applications. In: International Conference on Solid State Devices and Materials. SSDM, 1993.
13. Ismail K. Si/SiGe high-speed field-effect transistors. In: IEDM 95 Tech. Digest, 1995. p. 509-12.
14. Glück M, Hackbarth T, Birk M, Haas A, Kohn E, König U. Design and fabrication of SiGe n-type MODFETs. Physica E: Low dimensional Systems and Nanostructures 1998. p. 763-7.
15. Arafa M, Fay P, Ismail K, Chu JO, Meyerson BS, Adesia I. Dc and RF performance of 0.25 urn p-type SiGe MODFET. IEEE Electron Dev Lett 1996;17(9):449-51.
16. Saxarra M, Glück M, Albers JN, Behammer D, Langmann U, König U. Transimpedance amplifier based on Si/SiGe MODFETs. IEE Electron Lett 1998;34(5):499-500.
17. Ostermann T, Glück M, Hagelauer R, König U, Dobersberger M, Birk M, Oehler F. Inverter circuits with Si/SiGe n-type MODFETs. In: International Semiconductor Device Research Symposium. ISDRS, 1997.