Negative differential conductance in strained Si point contacts and wires

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1528-1530

  Koester, S J ^a   Ismail, K ^a   Lee, K Y ^a   Chu, J O ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005877437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119956     Document Type: Article

References (10)

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9. Assuming a dead-layer width of 0.13 μm, a Si wire with lithographic width of W=0.22 μm will have one-dimensional subband spacings of ∼1 meV.
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