Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 698-706

  Koster T ^a   Gondermann, J ^a   Hadam, B ^a   Spangenberg, B ^a   Schutze M ^a   Roskos, H G ^a   Kurz, H ^a   Brunner, J ^b   Abstreiter, G ^b  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; LASERS; LIGHT MEASUREMENT; NANOTECHNOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE TREATMENT;

ELECTRICAL SURFACE POTENTIALS; LASER DESORPTION; LOW TEMPERATURE POSTANNEALING; NANOMETER PATTERNING; NANOMETER STRUCTURES; PATTERNING TECHNOLOGY; PROCESS INDUCED DAMAGE;

HETEROJUNCTIONS;

EID: 0342362276     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589159     Document Type: Article

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