A Sub-0.18μm Gate Length CMOS Technology for High Performance (1.5V) and Low Power (l.0V)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 563-566

  Rodder, M ^a   Hong, Q Z ^a   Nandakumar, M ^a   Aur, S ^a   Hu, J C ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; SILICON COMPOUNDS; ANNEALING; CLADDING (COATING); ELECTRIC CURRENTS; ELECTRIC INVERTERS; GATES (TRANSISTOR); ION IMPLANTATION; OXIDES; SEMICONDUCTOR DOPING;

ANNEAL TEMPERATURES; BACK-END PROCESSING; CMOS TECHNOLOGY; DRIVE CURRENTS; GATE-LENGTH; LOW POWER; LOW POWER APPLICATION; LOWS-TEMPERATURES; PERFORMANCE; SHORT-CHANNEL EFFECT;

TEMPERATURE; CMOS INTEGRATED CIRCUITS;

COBALT SILICIDE; HIGHLY DOPED DRAIN EXTENSION; SHALLOW CHANNEL COUNTERDOPING; SHORT CHANNEL EFFECT;

EID: 0030387333     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554046     Document Type: Conference Paper

References (8)

1. [ l ] L. Su, et al, 1996 Symp. on VLSI Tech., p. 12.
2. M. Nandakumar, et al, 1996 Symp. on VLSI Tech., p. 68.
3. M. Rodder, et al, IEDM Tech. Dig., 1995, p. 417.
4. D. Hisamoto, et al, 1995 Symp. on VLSI Tech., p. 115.
5. [SI Y. Taur, et al, IEDM Tech. Dig., 1993,p. 127.
6. K. Goto, et al, IEDM Tech. Dig., 1995, p. 449.
7. J. Bevk, et al, IEDM Tech. Dig.,1995, p. 893.
8. H. Hu, et al, 1994 Symp. on VLSI Tech., p. 17.