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Volumn 45, Issue 10, 1998, Pages 2213-2221

Quantum effects upon drain current in a biased MOSFET

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

EID: 0032188387     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725256     Document Type: Article
Times cited : (29)

References (13)
  • 1
    • 34547827353 scopus 로고    scopus 로고
    • Properties of semiconductor surface inversion layers in the electric quantum limit
    • F. Stern and W. E. Howard Properties of semiconductor surface inversion layers in the electric quantum limit Phys. Rev. vol. 163 p. 816 1967.
    • Phys. Rev. Vol. 163 P. 816 1967.
    • Stern, F.1    Howard, W.E.2
  • 3
    • 0015488914 scopus 로고    scopus 로고
    • Quantization effects in semiconductor inversion and accumulation layers
    • J. Pals Quantization effects in semiconductor inversion and accumulation layers Philip's Res. Rep. Suppt. p. 1 1972.
    • Philip's Res. Rep. Suppt. P. 1 1972.
    • Pals, J.1
  • 7
    • 0025682843 scopus 로고    scopus 로고
    • Quantum effects in Si ra-MOS inversion layer at high substrate concentration
    • Y. Ohkura Quantum effects in Si ra-MOS inversion layer at high substrate concentration Solid State Electron. vol. 33 p. 1581 1990.
    • Solid State Electron. Vol. 33 P. 1581 1990.
    • Ohkura, Y.1
  • 9
    • 0029752460 scopus 로고    scopus 로고
    • Computationally efficient models for inversion layer quantization effects in deep submicron n-channel MOSFET's
    • S. A. Hareland et al Computationally efficient models for inversion layer quantization effects in deep submicron n-channel MOSFET's IEEE Trans. Electron Devices vol. 43 p. 90 1996.
    • IEEE Trans. Electron Devices Vol. 43 P. 90 1996.
    • Hareland, S.A.1
  • 10
    • 0032095761 scopus 로고    scopus 로고
    • Analysis of the MOS transistor based on the self-consistent solution to the Schrödinger and Poisson equations and on the local mobility model
    • T. Janik and B. Majkusiak Analysis of the MOS transistor based on the self-consistent solution to the Schrödinger and Poisson equations and on the local mobility model IEEE Trans. Electron Devices vol. 45 p. 1263 1998.
    • IEEE Trans. Electron Devices Vol. 45 P. 1263 1998.
    • Janik, T.1    Majkusiak, B.2
  • 11
    • 33747201473 scopus 로고    scopus 로고
    • See [4] [5] [7]-[9] for the details of the Schrödinger-Poisson solver formulation.
    • See [4] [5] [7]-[9] for the details of the Schrödinger-Poisson solver formulation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.