Scaling trends for device performance and reliability in channel-engineered n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 254-260

  Williams, S C ^a,b   Hulfachor, R B ^a   Kim, K W ^a   Littlejohn, M A ^a   Holton, W C ^a  

^a North Carolina State University   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; MICROELECTRONICS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0031674726     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658839     Document Type: Article

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