Sensitivity of subthreshold current to profile variations in long-channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2164-2171

  Brews, J R ^a  

^a University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; IONS; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SURFACE MEASUREMENT;

DOPING PROFILE; PROFILE SENSITIVITY; RETROGRADE BOX PROFILES; SUBTHRESHOLD CURRENT;

MOSFET DEVICES;

EID: 0030420165     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544387     Document Type: Article

References (10)

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