Quantum dot structures and devices with sharp adjustable electronic shells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 8, Issue 2, 2000, Pages 107-116

  Fafard, Simon ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; GROUND STATE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; IRON OXIDES; QUANTUM THEORY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR STORAGE; SEMICONDUCTOR SUPERLATTICES;

INDIUM ARSENIDE; SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR DEVICE STRUCTURES;

CADMIUM SELENIDE; CADMIUM SULFIDE; EIREV; GALLIUM ARSENIC PHOSPHIDE; HIGH-INDEX SUBSTRATES; MAGNETIC QUANTUM STRUCTURES; PHOTOSTABILITY; PULSED MAGNETIC FIELDS; QUANTUM-SIZE EFFECT; SELF-ASSEMBLED QUANTUM DOTS;

EID: 0034247819     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00126-0     Document Type: Article

References (63)

1. Fafard S., Leon R., Leonard D., Merz J.L., Petroff P.M. Phys. Rev. B. 52:1995;5752.
2. Mukai K., Ohtsuka N., Shoji H., Sugawara M. Appl. Phys. Lett. 68:1996;3013.
3. Leon R., Fafard S., Piva P.G., Ruvimov S., Liliental-Weber Z. Phys. Rev. B. 58:1998;R4262.
4. Raymond S.et al. Solid State Commun. 101:1997;883.
5. Wojs A., Hawrylak P. Solid State Commun. 100:1996;487.
6. Raymond S., Guo X., Merz J.L., Fafard S. Phys. Rev. B. 59:1999;7624.
7. Park G., Shchekin O.B., Huffaker D.L., Deppe D.G. Appl. Phys. Lett. 73:1998;3351.
8. Sugiyama Y., Nakata Y., Futatsugi T., Sugawara M., Awano Y., Yokoyama N. Japan. J. Appl. Phys. 36:1997;L158.
9. Grundmann M., Ledentsov N.N., Stier O., Bimberg D., Ustinov V.M., Kopev P.S., Alferov Zh.I. Appl. Phys. Lett. 68:1996;979.
10. Lipsanen H., Sopanen M., Ahopelto J. Phys. Rev. B. 51:1995;13 868.
11. Fafard S., Wasilewski Z.R., Nì Allen C., Picard D., Spanner M., McCaffrey J.P., Piva P.G. Phys. Rev. B. 59:1999;15368.
12. Fafard S., Wasilewski Z.R., Nì Allen C., Picard D., Piva P.G., McCaffrey J.P. Superlat. Microstruct. 25:1999;87.
13. Fafard S. Photonics Spectra. 31:1997;160.
14. Fafard S., Hinzer K., Raymond S., Dion M., McCaffrey J., Feng Y., Charbonneau S. Science. 274:1996;1350.
15. Ledentsov N.N., Ustinov V.M., Shchukin V.A., Kop'ev P.S., Alferov Zh.I., Bimberg D. Semiconductors. 32:1998;343.
16. Mirin R., Gossard A., Bowers J. Electronics Lett. 32:1996;1732.
17. Xie Q., Kalburge A., Chen P., Madhukar A. IEEE Photon. Technol. Lett. 8:1996;965.
18. Shoji H., Mukai K., Ohtsuka N., Sugawara M.et al. IEEE Photon. Technol. Lett. 12:1995;1385.
19. Shoji H., Nakata Y., Mukai K., Sugiyama Y., Sugawara M., Yokoyama N., Ishikawa H. Jpa. J. Appl. Phys. Lett. II. 35:1996;L903.
20. Shoji H., Nakata Y., Mukai K., Sugiyama Y., Sugawara M., Yokoyama N., Ishikawa H. Electon. Lett. 32:1996;2023.
21. Saito H., Nishi K., Ogura I., Sugou S., Sugimoto Y. Appl. Phys. Lett. 69:1996;3140.
22. Kamath K., Bhattacharya P., Sosnowski T., Norris T. J. Phillips, Electron. Lett. 32:1996;1374.
23. Fafard S., Hinzer K., SpringThorpe A.J., Feng Y., McCaffrey J., Charbonneau S., Griswold E.M. Mater. Sci. Eng. 51:1998;114.
24. Wasilewski Z.R., Fafard S., McCaffrey J.P. J. Crystal Growth. 201:1999;1131.
25. Leon R., Lobo C., Clark A., Bozek R., Wysmolek A., Kurpiewski A., Kaminska M. J. Appl. Phys. 84:1998;248.
26. Leon R., Fafard S. Phys. Rev. B. 58:1998;R1726.
27. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., LeRoux G. Appl. Phys. Lett. 47:1985;1099.
28. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 75:1995;2542.
29. Solomon G.S., Trezza J.A., Marshall A.F., Harris J.J.S. Phys. Rev. Lett. 76:1996;952.
30. S. Fafard, J. McCaffrey, Y. Feng, C. Ni Allen, H. Marchand, L. Isnard, P. Desjardins, S. Guillon, R.A. Masut, SPIE Proc. 3491, pp. 272-277.
31. Leon R., Williams D.R.M., Krueger J., Weber E.R., Melloch M.R. Phys. Rev. B. 56:1997;R4336.
32. Leon R.et al. Appl. Phys. Lett. 69:1996;1888.
33. Lobo C., Leon R., Fafard S., Piva P.G. Appl. Phys. Lett. 72:1998;2850.
34. Garcia J.M., Medeiros-Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., Petroff P.M. Appl. Phys. Lett. 71:1997;2014.
35. Lee J.S., Ren H.W., Sugou S., Masumoto Y. J. Appl. Phys. 84:1998;6686.
36. Malik S., Roberts C., Murray R., Pate M. Appl. Phys. Lett. 71:1997;1987.
37. Mo Q.W., Fan T.W., Gong Q., Wu J., Wang Z.G., Bai Y.Q. Appl. Phys. Lett. 73:1998;3518.
38. Johansson J., Seifert W., Zwiler V., Junno T., Samuelson L. Appl. Surf. Sci. 134:1998;47.
39. Heinrichsdorff F., Grundmann M., Stier O., Krost A., Bimberg D. J. Crystal Growth. 195:1999;540.
40. Xu S.J., Wang X.C., Chua S.J., Wang C.H., Fan W.J., Jiang J., Xie X.G. Appl. Phys. Lett. 72:1998;3335.
41. Fafard S., Raymond S., Wang G., Leon R., Leonard D., Charbonneau S., Merz J.L., Petroff P.M., Bowers J.E. Surf. Sci. 361:1996;778.
42. Wojs A., Hawrylak P., Fafard S., Jacak L. Phys. Rev. B. 54:1996;5604.
43. Leonard D., Fafard S., Pond K., Zhang Y.H., Merz J.M., Petroff P.M. J. Vac. Sci. Technol. B. 12:1994;2516.
44. Leonard D., Pond K., Petroff P.M. Phys. Rev. B. 50:1994;11 687.
45. Kobayashi N.P., Ramachandran T.R., Chen P., Madhukar A. Appl. Phys. Lett. 68:1996;3299.
46. Ramachandran T.R., Heitz R., Chen P., Madhukar A. Appl. Phys. Lett. 70:1997;640.
47. Schmidt K.H., Medeiros-Ribeiro G., Kunze U., Abstraiter G., Hagn M., Petroff P.M. J. Appl. Phys. 84:1998;4268.
48. Schmidt et al., Appl. Phys. Lett. 70 (1997) 1727.
49. Grassi Alessi M., Capizzi M., Bhatti A.S., Frova A., Martelli F., Frigeri P., Bosacchi A., Franchi S. Phys. Rev. B. 59:1999;7620.
50. Patanè A.et al. J. Appl. Phys. 83:1998;5529.
51. Patanè A.et al. Phys. Stat. Sol. A. 164:1997;493.
52. Colocci M.et al. Appl. Phys. Lett. 70:1997;3140.
53. Leon R., Lobo C., Zhou J., Romeo T., Cockayne D.J.H. Phys. Rev. Lett. 81:1998;2486.
54. Garcia J.M., Mankad T., Holtz P.O., Wellman P.J., Petroff P.M. Appl. Phys. Lett. 72:1998;3172.
55. Lian G.D., Yuan J., Brown L.M., Kim G.H., Ritchie D.A. Appl. Phys. Lett. 73:1998;49.
56. Saito H., Nishi K., Sugou S. Appl. Phys. Lett. 73:1998;2742.
57. Saito H., Nishi K., Sugou S. Appl. Phys. Lett. 74:1999;1224.
58. Leon R., Marcinkevicius S., Liao X.Z., Zou J., Cockayne D.J.H., Fafard S. Phys. Rev. B. 60:1999;R8517.
59. Fafard S., Ní Allen C. Appl. Phys. Lett. 75:1999;2374.
60. Fafard S., Wasilewski Z.R., Spanner M. Appl. Phys. Lett. 75:1999;1866.
61. Fafard S., Wasilewski Z.R., Ní Allen C., Hinzer K., McCaffrey J.P., Feng Y. Appl. Phys. Lett. 75:1999;986.
62. Fafard S., Spanner M., McCaffrey J.P., Wasilewski Z.R. Appl. Phys. Lett. 76:2000;2268.
63. M. Bayer, O. Stern, P. Hawrylak, S. Fafard, A. Forchel, Nature (2000), in press.