Temperature effects on the radiative recombination in self-assembled quantum dots

Surface Science

Volumn 361-362, Issue , 1996, Pages 778-782

  Fafard, S ^a   Raymond, S ^a,c   Wang, G ^b   Leon, R ^b,d   Leonard, D ^b   Charbonneau, S ^a   Merz, J L ^b,e   Petroff, P M ^b   Bowers, J E ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b University of California at Santa Barbara   (United States)

^c UNIVERSITY OF OTTAWA   (Canada)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e 236 Hesburgh Center for International Studies   (United States)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum effects; Quantum wells; Self assembly; Surface tension

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM THEORY; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SURFACE TENSION; THERMAL EFFECTS;

INDIUM ARSENIDE; PHOTOCARRIERS; QUANTUM EFFECTS; RADIATIVE RECOMBINATION; THERMIONIC EMISSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030196241     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00532-8     Document Type: Article

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