Self-formed InGaAs quantum dot lasers with multi-stacked dot layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 b, 1996, Pages

  Shoji, Hajime ^a   Nakata, Yoshiaki ^a   Mukai, Kohki ^a   Sugiyama, Yoshihiro ^a   Sugawara, Mitsuru ^a   Yokoyama, Naoki ^a   Ishikawa, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITATION; EPITAXIAL GROWTH; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM ARSENIDE; LASING; MULTI STACKED DOT LAYER; QUANTUM DOT LASERS; SELF FORMED DOT; STRANSKI-KRASTANOW GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030192863     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l903     Document Type: Article

References (9)