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85034147045
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note
-
The size of the QDs can be partly controlled by the substrate temperature during the growth. Lower growth temperatures give smaller QDs yielding larger intersublevel energy spacings.
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85034127889
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note
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Some gradients in the substrate temperature and in the arsenic pressure are likely to also be present when growing on a stationary wafer, but the main phenomena observed here are believed to originate from varying the InAs coverage.
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23
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85034127773
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note
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The coverage scale in ML is obtained by calibrating the growth rate in the center of the wafer (here 0.02 nm/s), and from determining the gradient in coverage between the center and the edges of the wafer using secondary ion mass spectroscopy (SIMS) and/or from PL measurements on other calibration samples.
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85034138219
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in press
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Similar results have been observed for ensembles with various densities obtained by MOCVD on surfaces with steps: R. Leon, S. Marcinkevicius, X. Liao, D. Cockayne, and S. Fafard, Phys. Rev. B 60 (in press).
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27
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85034142159
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note
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The observed blueshift with the narrowing of the intersublevel energy spacing and the suppression of the excited state emission might be a consequence of a different alignment of the band minima caused by the strain interactions in the higher density ensembles.
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28
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0043194686
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