Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages

Physica Status Solidi (A) Applied Research

Volumn 164, Issue 1, 1997, Pages 493-497

  Patane A ^a   Alessi, M Grassi ^a   Intonti, F ^a   Polimeni, A ^a,e   Capizzi, M ^a   Martelli, F ^b   Geddo, M ^c   Bosacchi, A ^d   Franchi, S ^d  

^a UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^b FONDAZIONE UGO BORDONI   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

^d CNR   (Italy)

^e UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EXCITONS; HETEROJUNCTIONS; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

EXCITON RECOMBINATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031276398     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199711)164:1<493::AID-PSSA493>3.0.CO;2-D     Document Type: Article

References (8)

1. Y. ARAKAWA and H. SAKAKI, Appl. Phys. Lett. 40, 939 (1982).
2. A. POLIMENI, A. PATANÈ, M. CAPIZZI, F. MARTELLI, L. NASI, and G. SALVIATI. Phys. Rev. B 53, R4213 (1996).
3. R. RAMACHANDRAN, R. HEITS, P. CHEN, and A. MADHUKAR, Appl. Phys. Lett. 70, 640 (1997).
4. D. LEONARD, K. PONDS, and P.M. PETROFF, Phys. Rev. B 50, 11 687 (1994).
5. F.H. POLLAK, Handbook on Semiconductors. Vol. 2, ed. P. BALKANSKY, North-Holland, Amsterdam, 1994.
6. R. ATANASOV, F. BASSANI, A. D'ANDREA, and N. TOMMASSINI, Phys. Rev. B 50, 14381 (1994).
7. U. BOCKELMANN and G. BASTARD, Phys. Rev. B 42, 8947 (1990).
8. R. HEITZ, M. GRUNDMANN, N.N. LEDENTSOV. L. ECKEY, M. VEIT, D. BIMBERG, V.M. USTINOV, A.Yu. EGOROV, A.E. ZHUKOV, P.S. KOPEV, and ZH.I. ALFEROV, Appl. Phys. Lett. 68, 361 (1996).