Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 965-967

  Xie, Q ^a,b   Kalburge, A ^a   Chen, P ^a   Madhukar, A ^a,b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DEPOSITION; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLITHOGRAPHY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

LASER LINES; LASING; LOW THRESHOLD CURRENT DENSITY; MIGRATION ENHANCED EPITAXY; THREE DIMENSIONAL QUANTUM BOXES;

SEMICONDUCTOR LASERS;

EID: 0030215909     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508705     Document Type: Article

References (14)

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