High-performance deep submicron MOSTs with polycrystalline-(Si,Ge) gates

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 311-315

  Ponomarev, Y V ^a   Salm, C ^a   Schmitz, J ^a   Woerlee, P H ^a   Gravesteijn, D J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

POLYCRYSTALLINE GATES;

MOSFET DEVICES;

EID: 0030688678     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)