Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 403-406

  Leobandung, E ^a   Sherony, M ^a   Sleight, J ^a   Bolam, R ^a   Assaderaghi, F ^a   Wu, S ^a   Schepis, D ^a   Ajmera, A ^a   Rausch, W ^a   Davari, B ^a   Shahidi, G ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY;

RING OSCILLATORS;

CMOS INTEGRATED CIRCUITS;

EID: 0032254781     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)