High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 848-855

  Ponomarev, Youri V ^a   Stolk, Peter A ^b   Salm, Cora ^a   Schmilz, Jurriaan ^b   Woerlee, Pierre H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODES; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS;

GATE WORKFUNCTIONS; TRANSISTOR CHANNEL PROFILE;

MOSFET DEVICES;

EID: 0033899086     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.831003     Document Type: Article

References (22)

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