Gate current and oxide reliability in p+ poly MOS capacitors with poly-Si and poly-Ge0.3Si0.7 gate material

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 213-215

  Salm, C ^b   Klootwijk, J H ^a,b,c   Ponomarev, Y ^c   Boos, P W M ^b,d   Gravesteijn, D J ^c   Woerlee, P H ^b,c  

^a IEEE

^b UNIVERSITY OF TWENTE   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Deep submicron MOS technology; Fowler Nordheim; GeSi; Oxide reliability; Valence band tunneling

Indexed keywords

CAPACITORS; GATES (TRANSISTOR); POLYCRYSTALS; RELIABILITY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

GATE CURRENTS;

MOSFET DEVICES;

EID: 0032121871     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701420     Document Type: Article

References (7)

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