Work function of Boron-Doped polycrystalline SixGe1-x films

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 456-458

  Hellberg, P E ^a   Zhang, S L ^a   Petersson, C S ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; MOS DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0031233749     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622529     Document Type: Article

References (13)

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