Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 538-540

  Cheng, Baohong ^a   Rao, V Ramgopal ^b   Woo, Jason C S ^c  

^a MOTOROLA INC   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 0033334509     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791935     Document Type: Article

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