Ultra low power supply voltage (0.3 V) operation with extreme high speed using bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced fast-signal-transmission shallow well

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 76-77

  Shibata, A ^a   Matsuoka, T ^a   Kakimoto, S ^a   Kotaki, H ^a   Nakano, M ^a   Adachi, K ^a   Ohta, K ^a   Hashizume, N ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC RESISTANCE; THRESHOLD VOLTAGE;

SIGNAL TRANSMISSION DELAYS;

MOSFET DEVICES;

EID: 0031636057     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)