Diffusion and electrical properties of boron and arsenic doped poly-Si and poly-GexSi1-x (x ∼ 0.3) as gate material for Sub-0.25 μm complementary metal oxide Semiconductor applications

Journal of the Electrochemical Society

Volumn 144, Issue 10, 1997, Pages 3665-3673

  Salm, C ^a   Van Veen, D T ^a   Gravesteijn, D J ^b   Holleman, J ^a   Woerlee, P H ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MORPHOLOGY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SOLUBILITY; TEXTURES;

ELECTRICAL ACTIVATION; GERMANIUM SILICIDE;

POLYCRYSTALLINE MATERIALS;

EID: 0031251115     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838067     Document Type: Article

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