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Volumn 6, Issue 4, 2000, Pages 601-614

High-brightness semiconductor laser sources for materials processing: stacking, beam shaping, and bars

Author keywords

[No Author keywords available]

Indexed keywords

INDUSTRIAL APPLICATIONS; LASER APPLICATIONS; MEDICAL APPLICATIONS; MICROELECTRONIC PROCESSING; MICROOPTICS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL DESIGN; OPTICAL SYSTEMS; PUMPING (LASER); QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034217329     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.883374     Document Type: Article
Times cited : (60)

References (42)
  • 2
    • 0031311058 scopus 로고    scopus 로고
    • Advanced concepts of using diode lasers in material processing
    • P. Loosen, "Advanced concepts of using diode lasers in material processing," in Proc. SPIE, vol. 3097, 1997, pp. 480-485.
    • (1997) Proc. SPIE , vol.3097 , pp. 480-485
    • Loosen, P.1
  • 4
    • 0026622817 scopus 로고
    • 120 W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted on diamond heatsink
    • M. Sakamoto, J. G. Endriz, and D. R. Scifres, "120 W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted on diamond heatsink," Electron. Lett., vol. 28, pp. 197-199, 1992.
    • (1992) Electron. Lett. , vol.28 , pp. 197-199
    • Sakamoto, M.1    Endriz, J.G.2    Scifres, D.R.3
  • 5
    • 0033900725 scopus 로고    scopus 로고
    • Fabrication and characterization of high power diode lasers
    • J. Jandeleit, "Fabrication and characterization of high power diode lasers," in Proc. SPIE, vol. 3945, 2000.
    • (2000) Proc. SPIE , vol.3945
    • Jandeleit, J.1
  • 6
    • 0031299993 scopus 로고    scopus 로고
    • Optimisation of micro channel heat sinks for high power diode lasers in copper technology
    • T. Ebert, J. Biesenbach, G. Treusch, P. Loosen, and R. Poprawe, "Optimisation of micro channel heat sinks for high power diode lasers in copper technology," in Proc. SPIE, vol. 3097, 1997, pp. 578-582.
    • (1997) Proc. SPIE , vol.3097 , pp. 578-582
    • Ebert, T.1    Biesenbach, J.2    Treusch, G.3    Loosen, P.4    Poprawe, R.5
  • 7
    • 0001324213 scopus 로고
    • Q-switched Nd : YLF laser end pumped by a diode-laser bar
    • H. Zbinden and J. E. Balmer, "Q-switched Nd : YLF laser end pumped by a diode-laser bar," Opt. Lett., vol. 15, no. 18, pp. 1014-1016, 1990.
    • (1990) Opt. Lett. , vol.15 , Issue.18 , pp. 1014-1016
    • Zbinden, H.1    Balmer, J.E.2
  • 8
    • 0027640481 scopus 로고
    • High-power Nd : YLF laser end pumped by a diode-laser bar
    • Th. Graf and J. E. Balmer, "High-power Nd : YLF laser end pumped by a diode-laser bar," Opt. Lett., vol. 18, no. 16, pp. 1317-1619, 1993.
    • (1993) Opt. Lett. , vol.18 , Issue.16 , pp. 1317-1619
    • Graf, Th.1    Balmer, J.E.2
  • 9
    • 0026853618 scopus 로고
    • Geometrical transformation of linear diode-laser arrays for longitudinal pumping of solid-state lasers
    • Apr.
    • R. J. Leger and W. C. Goltsos, "Geometrical transformation of linear diode-laser arrays for longitudinal pumping of solid-state lasers," IEEE J. Quantum Electron., vol. 28, pp. 1088-1100, Apr. 1992.
    • (1992) IEEE J. Quantum Electron. , vol.28 , pp. 1088-1100
    • Leger, R.J.1    Goltsos, W.C.2
  • 10
    • 0343921266 scopus 로고    scopus 로고
    • High-power diode laser collimators
    • R. E. Langenbach and H. J. Heimbeck, "High-power diode laser collimators," in Proc. SPIE, vol. 2774, 1996, pp. 453-456.
    • (1996) Proc. SPIE , vol.2774 , pp. 453-456
    • Langenbach, R.E.1    Heimbeck, H.J.2
  • 11
    • 84975539301 scopus 로고
    • Collimation of emissions from a high-power multistripe laser-diode bar with multiprism array coupling and focusing to a small spot
    • S. Yamaguchi, T. Kobayashi, Y. Saito, and K. Chiba, "Collimation of emissions from a high-power multistripe laser-diode bar with multiprism array coupling and focusing to a small spot," Opt. Lett., vol. 20, no. 8, pp. 898-900, 1995.
    • (1995) Opt. Lett. , vol.20 , Issue.8 , pp. 898-900
    • Yamaguchi, S.1    Kobayashi, T.2    Saito, Y.3    Chiba, K.4
  • 12
    • 0030165167 scopus 로고    scopus 로고
    • Efficient Nd : YAG laser end pumped by a 20-W diode-laser bar
    • W. A. Clarkson and D. C. Hanna, "Efficient Nd : YAG laser end pumped by a 20-W diode-laser bar," Opt. Lett., vol. 21, no. 12, pp. 869-871, 1996.
    • (1996) Opt. Lett. , vol.21 , Issue.12 , pp. 869-871
    • Clarkson, W.A.1    Hanna, D.C.2
  • 13
    • 0032224773 scopus 로고    scopus 로고
    • Fiber-coupling technique for high-power diode laser arrays
    • H. G. Treusch, K. Du, M. Baumann, V. Sturm, B. Ehlers, and P. Loosen, "Fiber-coupling technique for high-power diode laser arrays," in Proc. SPIE, vol. 3267, 1998, pp. 98-106.
    • (1998) Proc. SPIE , vol.3267 , pp. 98-106
    • Treusch, H.G.1    Du, K.2    Baumann, M.3    Sturm, V.4    Ehlers, B.5    Loosen, P.6
  • 16
    • 0031383467 scopus 로고    scopus 로고
    • High power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
    • L. J. Mawst and D. Botez, "High power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers," in Proc. SPIE, vol. 3001, 1997, pp. 7-12.
    • (1997) Proc. SPIE , vol.3001 , pp. 7-12
    • Mawst, L.J.1    Botez, D.2
  • 17
    • 0031377737 scopus 로고    scopus 로고
    • Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for λ = 808 and 980 nm
    • M. Razeghi, H. Yi, J. Diaz, S. Kim, and M. Erdtmann, "Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for λ = 808 and 980 nm," in Proc. SPIE, vol. 3001, 1997, pp. 243-252.
    • (1997) Proc. SPIE , vol.3001 , pp. 243-252
    • Razeghi, M.1    Yi, H.2    Diaz, J.3    Kim, S.4    Erdtmann, M.5
  • 18
    • 0031339382 scopus 로고    scopus 로고
    • Operational stability of 980-pump lasers at 200 mW and above
    • A. Oosenbrug and A. Jakubowicz, "Operational stability of 980-pump lasers at 200 mW and above," in Proc. SPIE, vol. 3001, 1997, pp. 62-70.
    • (1997) Proc. SPIE , vol.3001 , pp. 62-70
    • Oosenbrug, A.1    Jakubowicz, A.2
  • 19
    • 0029712152 scopus 로고    scopus 로고
    • Aluminum-free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE
    • Schwäbisch-Gmünd, Germany, Apr. 21-25
    • J. Aarik, A. Ovtchinnikov, and H. Asonen, "Aluminum-free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE," in Proc. 8th Int. Conf. Indium Phosphide and Related Materials, Schwäbisch-Gmünd, Germany, Apr. 21-25, 1996, pp. 176-179.
    • (1996) Proc. 8th Int. Conf. Indium Phosphide and Related Materials , pp. 176-179
    • Aarik, J.1    Ovtchinnikov, A.2    Asonen, H.3
  • 22
    • 0029759066 scopus 로고    scopus 로고
    • Optical strength of semiconductor laser materials
    • Jan.
    • P. G. Eliseev, "Optical strength of semiconductor laser materials," Prog. Quantum Electron., vol. 20, pp. 1-82, Jan. 1996.
    • (1996) Prog. Quantum Electron. , vol.20 , pp. 1-82
    • Eliseev, P.G.1
  • 23
    • 0028755598 scopus 로고
    • Study of correlation between optical characteristics and mirror facet temperature of the active region in high power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes
    • N. Katsavets, D. Garbuzov, T. Grishina, I. Kudrik, and P. Pitkanen, "Study of correlation between optical characteristics and mirror facet temperature of the active region in high power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes," in Proc. SPIE, vol. 2148, 1992, pp. 152-156.
    • (1992) Proc. SPIE , vol.2148 , pp. 152-156
    • Katsavets, N.1    Garbuzov, D.2    Grishina, T.3    Kudrik, I.4    Pitkanen, P.5
  • 25
    • 0343921251 scopus 로고    scopus 로고
    • Future directions in 980 nm pump lasers: Submarine deployment to low cost watt class terrestrial pumps
    • V. Gulgazov, G. Jackson, K. Lascola, J. Major Jr., R. Parke, T. Richard, V. Rossin, and K. Zhang, "Future directions in 980 nm pump lasers: Submarine deployment to low cost watt class terrestrial pumps," Crit. Rev., vol. CR73, pp. 141-152, 1999.
    • (1999) Crit. Rev. , vol.CR73 , pp. 141-152
    • Gulgazov, V.1    Jackson, G.2    Lascola, K.3    Major J., Jr.4    Parke, R.5    Richard, T.6    Rossin, V.7    Zhang, K.8
  • 28
    • 0031078965 scopus 로고    scopus 로고
    • Entirely aluminium free 905 nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP : Fe regrowth
    • S. Lourdudoss, A. Ovtchinnikov, O. Kjebon, S. Nilsson, L. Bäckbom, T. Klinga, and R. Holz, "Entirely aluminium free 905 nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP : Fe regrowth," IEEE Trans. Electron Devices, vol. 44, no. 2, pp. 339-340, 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , Issue.2 , pp. 339-340
    • Lourdudoss, S.1    Ovtchinnikov, A.2    Kjebon, O.3    Nilsson, S.4    Bäckbom, L.5    Klinga, T.6    Holz, R.7
  • 30
    • 20544462283 scopus 로고    scopus 로고
    • High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
    • A. Al-Muhanna, L. Mawst, D. Botez, D. Garbuzov, R. Martinelli, and J. Connolly, "High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers," Appl. Phys. Lett., vol. 73, no. 9, pp. 1182-1184, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , Issue.9 , pp. 1182-1184
    • Al-Muhanna, A.1    Mawst, L.2    Botez, D.3    Garbuzov, D.4    Martinelli, R.5    Connolly, J.6
  • 31
    • 0005479160 scopus 로고    scopus 로고
    • Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on GaAs substrate
    • Y. H. Cho and B. D. Choe, "Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on GaAs substrate," Appl. Phys. Lett., vol. 69, no. 24, pp. 3740-3742, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.24 , pp. 3740-3742
    • Cho, Y.H.1    Choe, B.D.2
  • 32
    • 0031383467 scopus 로고    scopus 로고
    • High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
    • L. J. Mawst and D. Botez, "High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers," in Proc. SPIE, vol. 3001, 1997, pp. 7-12.
    • (1997) Proc. SPIE , vol.3001 , pp. 7-12
    • Mawst, L.J.1    Botez, D.2
  • 34
    • 0033123788 scopus 로고    scopus 로고
    • Short-wavelength (0.7 μm < λ < 0.78 μm) high-power InGaAsP-active diode lasers
    • May-June
    • L. Mawst, S. Rusli, A. Al-Muhanna, and K. Wade, "Short-wavelength (0.7 μm < λ < 0.78 μm) high-power InGaAsP-active diode lasers," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 785-791, May-June 1999.
    • (1999) IEEE J. Select. Topics Quantum Electron. , vol.5 , pp. 785-791
    • Mawst, L.1    Rusli, S.2    Al-Muhanna, A.3    Wade, K.4
  • 35
    • 0029371091 scopus 로고
    • Highly reliable operation of high-power InGaAsP/InGaP/AlGaAs 0.8 μm separate confinement heterostructure laser
    • T. Fukunaga, M. Wada, H. Asano, and T. Hayakawa, "Highly reliable operation of high-power InGaAsP/InGaP/AlGaAs 0.8 μm separate confinement heterostructure laser," Jpn. J. Appl. Phys., vol. 34, pp. L1175-L1177, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34
    • Fukunaga, T.1    Wada, M.2    Asano, H.3    Hayakawa, T.4
  • 36
    • 0032652454 scopus 로고    scopus 로고
    • High reliability in 0.8-um high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide
    • T. Hayakawa, "High reliability in 0.8-um high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide," in Proc. SPIE, vol. 3628, 1999, pp. 29-38.
    • (1999) Proc. SPIE , vol.3628 , pp. 29-38
    • Hayakawa, T.1
  • 38
    • 0033361711 scopus 로고    scopus 로고
    • Reliability of 0.98-1.02 μm InGaAs laser diodes-improvement by low temperature growth of active layer
    • H. Nozawa, T. Sasaki, C. Amano, J. Temmyo, and E. Munoz, "Reliability of 0.98-1.02 μm InGaAs laser diodes-improvement by low temperature growth of active layer," in Proc. LEOS' 99 12th Annu. Meeting, 1999, pp. 198-199.
    • (1999) Proc. LEOS' 99 12th Annu. Meeting , pp. 198-199
    • Nozawa, H.1    Sasaki, T.2    Amano, C.3    Temmyo, J.4    Munoz, E.5
  • 41
    • 0031359014 scopus 로고    scopus 로고
    • Highly efficient 808 nm range al-free lasers by gas source MBE
    • A. Ovtchinnikov, J. Näppi, J. Aarik, S. Mohrdiek, and H. Asonen, "Highly efficient 808 nm range Al-free lasers by gas source MBE," Proc. SPIE, vol. 3004, pp. 34-42, 1997.
    • (1997) Proc. SPIE , vol.3004 , pp. 34-42
    • Ovtchinnikov, A.1    Näppi, J.2    Aarik, J.3    Mohrdiek, S.4    Asonen, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.